In-Situ TOF-SIMS and SFM Measurements Providing True 3D Chemical Characterization of Inorganic and Organic Nanostructures

Information on the chemical composition, physical properties and the three dimensional structure of materials and devices at the nanometer scale is of major importance in nanoscience and nanotechnology. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is known to be an extremely sensitive surface imaging technique which provides elemental as well as comprehensive molecular information on all types of solid surfaces. Depth profiling of multilayers with high depth resolution as well as threedimensional analysis is performed in the so-called dual beam mode. In this mode the pulsed analysis beam is combined with a low energy sputter ion beam for the removal of material providing chemical 3D information of the sample. However, the topography of the initial sample surface as well as the subsequent evolution of the topography due to different erosion rates of the compounds cannot be identified by the technique and lead to distortions of the detected depth distribution. In order to get a true image of the 3D volume, the time scale of the TOF-SIMS 3D depth profiles needs to be converted into a depth scale. Scanning Force Microscopy (SFM) provides the required complementary information on the surface topography with a resolution on the nanometer level. Beyond that SFM can provide valuable information about the physical properties of the sample if the cantilever is operated in the different dynamic operation modes.